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Interdigitated transducer devices provide an advantageous platform to study stress-enhanced interfacial phenomena at elevated temperatures but require a thorough understanding of temperature-dependent material properties. In this study, the temperature dependence of the piezoelectric coefficient for gallium arsenide is determined from 22 ℃ to 177 ℃. Experimental scattering parameter responses are measured for a two-port surface acoustic wave resonator at different temperatures and piezoelectric coefficient values are extracted using a frequency-domain finite element method simulation. Device measurements are taken using an interdigitated transducer fabricated on semi-insulating GaAs(100), oriented in the 〈110〉 direction and device resonant frequencies are shown to decrease with increasing temperature. The experimental scattering response is used to reconcile the simulated scattering response and extract the 𝑒14 piezoelectric coefficient, which is shown to increase linearly with temperature. Using the extracted 𝑒14, surface acoustic wave analysis is completed to study the magnitude of bulk stress values and surface displacement over the experimental temperature range produced by a standing surface acoustic wave field. Surface displacement measurements are taken at room temperature using contact-mode AFM, which corroborate the simulation predictions. The modeling results demonstrate an interdigitated transducers potential as an experimental stage to study surface and bulk stress effects on temperature-sensitive phenomena. 

Interdigitated transducer devices provide an advantageous platform to study stress-enhanced interfacial phenomena at elevated temperatures but require a thorough understanding of temperature-dependent material properties. In this study, the temperature dependence of the piezoelectric coefficient for gallium arsenide is determined from 22 ℃ to 177 ℃. Experimental scattering parameter responses are measured for a two-port surface acoustic wave resonator at different temperatures and piezoelectric coefficient values are extracted using a frequency-domain finite element method simulation. Device measurements are taken using an interdigitated transducer fabricated on semi-insulating GaAs(100), oriented in the 〈110〉 direction and device resonant frequencies are shown to decrease with increasing temperature. The experimental scattering response is used to reconcile the simulated scattering response and extract the e_14 piezoelectric coefficient, which is shown to increase linearly with temperature. Using the extracted e_14, surface acoustic wave analysis is completed to study the magnitude of bulk stress values and surface displacement over the experimental temperature range produced by a standing surface acoustic wave field. Surface displacement measurements are taken at room temperature using contact-mode AFM, which corroborate the simulation predictions. The modeling results demonstrate an interdigitated transducers potential as an experimental stage to study surface and bulk stress effects on temperature-sensitive phenomena.